New perspective on passively quenched single photon avalanche diodes: effect of feedback on impact ionization.

نویسندگان

  • David A Ramirez
  • Majeed M Hayat
  • Graham J Rees
  • Xudong Jiang
  • Mark A Itzler
چکیده

Single-photon avalanche diodes (SPADs) are primary devices in photon counting systems used in quantum cryptography, time resolved spectroscopy and photon counting optical communication. SPADs convert each photo-generated electron hole pair to a measurable current via an avalanche of impact ionizations. In this paper, a stochastically self-regulating avalanche model for passively quenched SPADs is presented. The model predicts, in qualitative agreement with experiments, three important phenomena that traditional models are unable to predict. These are: (1) an oscillatory behavior of the persistent avalanche current; (2) an exponential (memoryless) decay of the probability density function of the stochastic quenching time of the persistent avalanche current; and (3) a fast collapse of the avalanche current, under strong feedback conditions, preventing the development of a persistent avalanche current. The model specifically captures the effect of the load's feedback on the stochastic avalanche multiplication, an effect believed to be key in breaking today's counting rate barrier in the 1.55-μm detection window.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modeling Negative Feedback in Single Photon Avalanche Diodes

Recently, considerable attention has been placed upon exploiting the negative-feedback effect in accelerating the quenching time of the avalanche current in passively quenched single-photon avalanche-diode (SPAD) circuits. Reducing the quenching time results in a reduction in the total charge generated in the SPAD, thereby reducing the number of trapped carries; this, in turn, can lead to impro...

متن کامل

Neural Imaging Using Single-Photon Avalanche Diodes

Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...

متن کامل

Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode

This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the pixel active area. The fill factor of the SPAD increases from 12.5% to 42% in comparison with simi...

متن کامل

Advances in InGaAs/InP single-photon detector systems for quantum communication

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and...

متن کامل

Negative Feedback Avalanche Diodes for Near-infrared Single Photon Detection

In recent years significant progress has been made in near-infrared single photon detection using Geiger-mode InPbased single photon avalanche diodes (SPADs). A more detailed understanding of these detectors with regard to device design, material growth and device fabrication has led to continual performance improvements. A variety of circuits for enabling SPAD Geiger-mode operation have been p...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 20 2  شماره 

صفحات  -

تاریخ انتشار 2012